NTE310 Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Trace Switch
Absolute Maximum Ratings: Repetitive Peak Forward Off-State and Reverse Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . 800V RMS On-State Current, ITRMSM, IFRMSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Mean On-State Current (TC = +80C), ITAVM, IFAVM Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.4A Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.45A Repetitive Peak On-State Current, ITRM, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Surge Current (t = 10ms, tvi = +100C), ITSM, IFSM Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Non-Repetitive Rate of Rise of On-State Current, di/dtcrit . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/s Repetitive Rate of Rise of On-State Current (ITM = 20A, tvi = +100C, VDM = 640V), di/dtcrit (Pulse Generator Data: vL = 8V, iK = 0.25A, diG/dt 0.25A/s) fo = 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A/s fo = 16kHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/s Rate of Rise of Off-State Voltage (tvi = +100C, VD = 536V), dv/dtcrit . . . . . . . . . . . . . . . . . . 400V/s Rate of Rise of Voltage Subsequent to Prior On-State Current, dv/dtcrit tvi = +100C, VD = 536V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V/s Peak Gate Power Losses (tg 10s), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Total Mean Gate Power Loss for One Cycle, PG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +130C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3C/W Thermal Resistance, Junction-to-Ambient, RthJA Without Heatsink . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35C/W On Vertical Cooling Fin 60mm x 60mm x 1.5mm, Al or Cu, Roughened Surface . . 10C/W Electrical Characteristics: Maximum On-State Voltage (tvi = +25C, iT = iF = 10A), VT, VF Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.16V Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2V Threshold Voltage, V(TO) Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6V Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4V Forward Slope Resistance, rT, rF Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Electrical Characteristics (Cont'd): Maximum Gate Trigger Voltage (tvi = +25C, VD = 6V, RA = 20), VGT . . . . . . . . . . . . . . . . . . . 2.0V Minimum Gate Trigger Voltage (tvi = +100C, VD = 6V, RA = 20), VGT . . . . . . . . . . . . . . . . . . . 0.1V Maximum Gate Trigger Current (tvi = +25C, VD = 6V, RA = 20), IGT . . . . . . . . . . . . . . . . . . . 50mA Maximum Holding Current (tvi = +25C, VD = 6V, RA = 20), IH . . . . . . . . . . . . . . . . . . . . . . . . 100mA Maximum Latching Current (tvi = +25C, VD = 6V, RGK 20), IL . . . . . . . . . . . . . . . . . . . . . . 210mA (Pulse Generator Data: iG = 0.25A, diG/dt = 0.25A/s, tg = 4s) Typical Capacitance, Anode-Cathode at Zero Voltage (tvi = +25C, fo = 16kHz), Czero . . . . . 250pF Maximum Lag Charge (tvi = +100C, iFM = 10A, -diF/dt = 10A/s), QS . . . . . . . . . . . . . . . . . 0.96As Maximum Forward Off-State and Reverse Current (tvi = +100C, vD = 800V), iD, iR . . . . . . . 1.5mA Maximum Gate Controlled Delay Time (tvi = +25C, VD = 536V, iTM = 5A), tgd . . . . . . . . . . . . 0.8s (Pulse Generator Data: iG = 0.25A, diG/dt = 0.5A/s) Maximum Pulse Turn-Off Time (tvi = +100C), tqp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.9s Typical Pulse Turn-Off Time (tvi = +80C, fo = 16kHz), tqp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8s Maximum Turn-On Voltage Peak (tvi = +25C, iFM = 1A, diF/dt = 5A/s), uFRM . . . . . . . . . . . . . . . 3V Maximum Reverse Recovery Time (tvi = +25C, iFM = 10A, -diF/dt = 10A/s), trr . . . . . . . . . . 0.7s .485 (12.3) Dia .295 (7.5)
.062 (1.57)
.031 (0.78) Dia
.360 (9.14) Min Gate
.960 (24.3) .580 (14.7)
.147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max
Anode/Case
Cathode
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